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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLL1214-35 L-band radar LDMOS driver transistor
Product specification 2002 Sep 27
Philips Semiconductors
Product specification
L-band radar LDMOS driver transistor
FEATURES * High power gain * Easy power control * Excellent ruggedness * Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS * L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION
2 1
BLL1214-35
PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
3
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.
Top view
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; t = 1 ms; = 10 % f (MHz) 1200 to 1400 VDS (V) 36 PL (W) 35 Gp (dB) >13 D (%) >43
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature CONDITIONS - - under RF conditions; Th 25 C - -65 - MIN. MAX. 75 15 110 +150 200 V V W C C UNIT
2002 Sep 27
2
Philips Semiconductors
Product specification
L-band radar LDMOS driver transistor
THERMAL CHARACTERISTICS SYMBOL Zth j-h Note 1. Thermal resistance is determined under RF operating conditions; tp = 1 ms, = 10 %. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current on-state drain current gate leakage current forward transconductance drain-source on-state resistance CONDITIONS VGS = 0; ID = 0.7 mA VDS = 10 V; ID = 70 mA VGS = 0; VDS = 36 V VGS = VGSth + 9 V; VDS = 10 V VGS = 20 V; VDS = 0 VDS = 10 V; ID = 2.5 A VGS = 10 V; ID = 2.5 A MIN. 75 4.5 - 10 - - - PARAMETER thermal impedance from junction to heatsink CONDITIONS Th = 25 C; note 1
BLL1214-35
VALUE 1.1
UNIT K/W
TYP. - - - - - 2 300
MAX. - 5.5 10 - 125 - -
UNIT V V A A nA S m
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 C; Zth mb-h = 0.65 K/W, unless otherwise specified. MODE OF OPERATION Pulsed class-AB; t = 1 ms; = 10 % f (MHz) 1200 to 1400 VDS (V) 36 IDQ (mA) 50 PL (W) 35 Gp (dB) >13 D (%) >43
Ruggedness in class-AB operation The BLL1214-35 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 36 V; frequency from 1200 MHz to 1400 MHz at rated load power. Typical impedance FREQUENCY (GHZ) 1.20 1.25 1.30 1.35 1.40 ZS () 6.48 - j 3.9 3.88 - j 3.2 3.28 - j 2.4 2.55 - j 1.48 1.69 - j 0.51 ZL () 1.95 + j 3.27 1.90 + j 2.57 2.01 + j 2.27 2.20 + j 2.26 1.72 + j 2.35
2002 Sep 27
3
Philips Semiconductors
Product specification
L-band radar LDMOS driver transistor
BLL1214-35
handbook, halfpage
50 PL
MLD923
handbook, halfpage
20 Gp
MLD924
(W) 40
(dB) 19
(1)
(1)
(2)
(3)
30
18
(2)
20
17
(3)
10
16
0 0 0.2 0.4 0.6 0.8 Pi (W) 1
15 0 10 20 30 40 PL (W) 50
(1) f = 1.2 GHz. tp = 1 ms; = 10%.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
(1) f = 1.2 GHz. tp = 1 ms; = 10%.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz.
Fig.2
Load power as a function of input power; typical values.
Fig.3
Power gain as a function of load power; typical values.
handbook, halfpage
60
MLD925
handbook, halfpage
(%)
(3)
20 Gp
MLD926
60 D (%) 50
(dB) 19
(1) (2)
D
40
18 Gp
40
17 20 16
30
20
0 0 10 20 30 40 PL (W) 50
15 1.1
1.2
1.3
1.4 f (GHz)
10 1.5
(1) f = 1.2 GHz. tp = 1 ms; = 10%.
(2) f = 1.3 GHz.
(3) f = 1.4 GHz. tp = 1 ms; = 10%.
Fig.4
Efficiency as a function of load power; typical values.
Fig.5
Power gain and efficiency as functions of frequency; typical values.
2002 Sep 27
4
Philips Semiconductors
Product specification
L-band radar LDMOS driver transistor
BLL1214-35
handbook, full pagewidth
C5 C6 C4
C7 C8 C9 C14 C10
C3 C1
R1
C12 C11 C13
MCE033
Shaded areas indicate tuning stubs.
Fig.6 Component layout.
List of components (see Fig.6) COMPONENT C1, C12 C3 C4, C9 C6, C7 C5, C8 C10 C11 C13, C14 R1 capacitor capacitor capacitor capacitor capacitor capacitor capacitor capacitor chip resistor DESCRIPTION 51 pF 6.8 pF 47 pF 4.7 F/50 V 2.3 nF 2.7 pF 1.0 pF 1.5 pF 82 VALUE CATALOGUE NO. ATC100A ATC100A ATC100A 475 50k 952 ATC100B ATC100A ATC100A ATC100A
2002 Sep 27
5
Philips Semiconductors
Product specification
L-band radar LDMOS driver transistor
PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
BLL1214-35
SOT467C
D
A F
3
D1
U1 q C
B c
1
E1 H U2 E
A
p
w1 M A M B M
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inch A 4.67 3.94 b 5.59 5.33 c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 0.233 0.227 E1 5.97 5.72 F 1.65 1.40 H 18.54 17.02 0.73 0.67 p 3.43 3.18 Q 2.21 1.96 q 14.27 U1 20.45 20.19 U2 5.97 5.72 w1 0.25 w2 0.51
0.184 0.220 0.006 0.155 0.210 0.004
0.364 0.365 0.356 0.355
0.235 0.065 0.225 0.055
0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225
OUTLINE VERSION SOT467C
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-06 99-12-28
2002 Sep 27
6
Philips Semiconductors
Product specification
L-band radar LDMOS driver transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BLL1214-35
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2002 Sep 27
7
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/01/pp8
Date of release: 2002
Sep 27
Document order number:
9397 750 09541

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